Charge density waves (CDWs) are a canonical interaction-driven electronic phenomenon with potential technological applications, such as collective electronic switching and local information storage. Here, we investigate the properties of the CDW in the mixed-chalcogen compound 1T-TaSeTe using bulk- and surface-sensitive diffraction and spectroscopy techniques and transport measurements. Compared to the pristine parent compound 1T-TaSe2, we find that the incommensurate CDW appears to remain incommensurate down to low temperatures. The CDW-induced gapping of the Fermi surface is pronounced and may explain the observed semiconductor-like electrical resistivity behavior in combination with chalcogen disorder. Our results demonstrate that disordered chalcogen substitution doping can modify, yet preserve, the characteristic emergent electronic properties of a transition metal dichalcogenide.
Sharma et al. (Wed,) studied this question.