What question did this study set out to answer?

To fabricate ferroelectric LaSrMnO thin films and evaluate their properties for silicon integration.

March 15, 2026

Preparation and study of ferroelectric films of LaSrMnO

Key Points

To fabricate ferroelectric LaSrMnO thin films and evaluate their properties for silicon integration.
Fabrication of LSMO thin films on silicon using magnetron sputtering and annealing.
Measurement of capacitance-voltage characteristics in Ni-LSMO-Si metal-insulator-semiconductor structures.
Thermal treatment at 800 °C induced ferroelectric properties in LSMO films.
C–V measurements showed a hysteresis loop width of 5 V.
Capacitance switching ratio increased by more than two-fold.

Abstract

This paper presents the results of fabricating ferroelectric LaSrMnO (LSMO) thin films on silicon substrates. Oriented LSMO films were obtained using magnetron sputtering followed by annealing. Capacitance-voltage (C–V) measurements of the Ni-LSMO-Si metal-insulator-semiconductor (MIS) structures revealed that thermal treatment at 800 °C induces ferroelectric properties in the LSMO films. This is evidenced by a C–V hysteresis loop with a width of 5 V and a more than two-fold increase in the capacitance switching ratio. The demonstrated method shows promise for the integration of ferroelectric LSMO into silicon technology.

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Cite This Study

Luzanov et al. (Wed,) studied this question.

synapsesocial.com/papers/69b5ff8d83145bc643d1c53c https://doi.org/https://doi.org/10.7868/s3034590125120108

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