Experimental results demonstrate ferroelectric properties in LSMO thin films, suggesting applications in silicon technology.
This paper presents the results of fabricating ferroelectric LaSrMnO (LSMO) thin films on silicon substrates. Oriented LSMO films were obtained using magnetron sputtering followed by annealing. Capacitance-voltage (C–V) measurements of the Ni-LSMO-Si metal-insulator-semiconductor (MIS) structures revealed that thermal treatment at 800 °C induces ferroelectric properties in the LSMO films. This is evidenced by a C–V hysteresis loop with a width of 5 V and a more than two-fold increase in the capacitance switching ratio. The demonstrated method shows promise for the integration of ferroelectric LSMO into silicon technology.
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Luzanov et al. (2025) studied this question.
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