We report a detailed investigation of low‐frequency resistance fluctuations (1/f noise) in chemical vapor deposition (CVD) grown graphene. Systematic measurements reveal that the magnitude of 1/f noise in CVD‐grown graphene is significantly higher, by several orders of magnitude, than that typically observed in exfoliated single‐crystal graphene. This enhancement is attributed to structural imperfections such as grain boundaries and defect states within the polycrystalline film. Detailed analysis of the temperature dependence of the noise demonstrates that the resistance fluctuations arise from thermally activated dynamics of localized defects. These results provide key insights into the microscopic mechanism of noise in scalable graphene films and highlight the role of defect engineering in optimizing graphene for large‐scale electronic applications. Our findings establish low‐frequency noise as a sensitive probe of microscopic disorder in CVD graphene, providing a practical pathway for assessing material quality in scalable electronic technologies.
Nayak et al. (Mon,) studied this question.