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The physical properties of single crystals of the noncubic II-V semiconducting compounds Zn₃As₂, ZnAs₂, ZnSb, Cd₃As₂, CdAs₂, and CdSb have been investigated. Energy gaps in these materials vary from approximately 0. 13 to 1. 0 ev. Mobilities at 297^ range from 10 cm^2/volt sec to 15 000 cm^2/volt sec and increase at low temperature. Resistivity and mobility anisotropy have been investigated in detail for CdAs₂. Except for the {A₃}^II{B₂}^V compounds, high optical transmission has been observed from the intrinsic edge to approximately 30 microns.
Turner et al. (Wed,) studied this question.