The physical properties of single crystals of the noncubic II-V semiconducting compounds Zn₃{As}₂$, Zn${As}₂$, ZnSb, ${Cd}₃As₂, CdAs₂, and CdSb have been investigated. Energy gaps in these materials vary from approximately 0.13 to 1.0 ev. Mobilities at 297^∘{}K range from 10 cm²/volt sec to 15 000 cm²/volt sec and increase at low temperature. Resistivity and mobility anisotropy have been investigated in detail for CdAs₂. Except for the A₃IIB₂V compounds, high optical transmission has been observed from the intrinsic edge to approximately 30 microns.
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Turner et al. (1961) studied this question.
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