What question did this study set out to answer?

To investigate how a dual-layer silicon oxide structure can enhance the passivation of boron-doped polysilicon contacts.

May 1, 2026

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Enhanced Passivation of Boron-Doped Polysilicon Passivated Contacts With a Single-Sided J0 of 2.8 fA/cm2 by Dual-Layer Silicon Oxide Structure.

LSLizhen ShuiNingbo University LYLina YeChinese Academy of Sciences HZHailong ZhangQingdao University

Key Points

To investigate how a dual-layer silicon oxide structure can enhance the passivation of boron-doped polysilicon contacts.
Utilized a dual-layer silicon oxide structure
Reduced interface defect density
Evaluated performance in high-efficiency TBC cells
Achieved a single-sided J0 of 2.8 fA/cm²
Significant reduction in interface defects
Enhanced overall passivation effectiveness

Abstract

architecture effectively lowers interface defect density and enhances p-type TOPCon passivation, underscoring its significant potential for industrial application in high-efficiency TBC cells.

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View Full Paper

Enhanced Passivation of Boron-Doped Polysilicon Passivated Contacts With a Single-Sided J0 of 2.8 fA/cm2 by Dual-Layer Silicon Oxide Structure.

Key Points

Abstract

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