Enhanced Passivation of Boron-Doped Polysilicon Passivated Contacts With a Single-Sided J₀ of 2.8 fA/cm² by Dual-Layer Silicon Oxide Structure.

Lizhen Shui; Lina Ye; Hailong Zhang; Shengjie Guan; Zhenhai Yang; Huan Pu; Sheshicheng Chen; Haojiang Du; Hongkai Zhou; Na Lin; Mingdun Liao; Liu W; Zhiqin Ying; Xi Yang; Chuanxiao Xiao; Hisham Nasser; Eni Muka; Raşit Turan; Zunke Liu; Yuheng Zeng; J P Ye

doi:10.1002/smll.73603

Key Points

To investigate how a dual-layer silicon oxide structure can enhance the passivation of boron-doped polysilicon contacts.
Utilized a dual-layer silicon oxide structure
Reduced interface defect density
Evaluated performance in high-efficiency TBC cells
Achieved a single-sided J0 of 2.8 fA/cm²
Significant reduction in interface defects
Enhanced overall passivation effectiveness

Implication

Shows improved passivation in boron-doped polysilicon contacts, highlighting industrial potential for TBC cells.

Abstract

architecture effectively lowers interface defect density and enhances p-type TOPCon passivation, underscoring its significant potential for industrial application in high-efficiency TBC cells.

Discussion

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Cite This Study

Shui et al. (2026) studied this question.

synapsesocial.com/papers/69f443e8967e944ac5566fef https://doi.org/10.1002/smll.73603

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Enhanced Passivation of Boron-Doped Polysilicon Passivated Contacts With a Single-Sided J₀ of 2.8 fA/cm² by Dual-Layer Silicon Oxide Structure.

Key Points

Implication

Abstract

Discussion

Cite This Study

Enhanced Passivation of Boron-Doped Polysilicon Passivated Contacts With a Single-Sided J₀ of 2.8 fA/cm² by Dual-Layer Silicon Oxide Structure.

Key Points

Implication

Abstract

Discussion

Cite This Study

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