Key points are not available for this paper at this time.
Double-heterojunction AlxGa1−xAs lasers have been prepared with a compositional discontinuity Δx at the heterojunctions of 0.45–0.68 and active region widths of ∼0.1 μm. These devices have the lowest room-temperature threshold current densities (475 A/cm2) yet reported, with a differential quantum efficiency of 40% or more.
M. Ettenberg (Mon,) studied this question.