Double-heterojunction AlxGa1−xAs lasers have been prepared with a compositional discontinuity Δx at the heterojunctions of 0.45–0.68 and active region widths of ∼0.1 μm. These devices have the lowest room-temperature threshold current densities (475 A/cm2) yet reported, with a differential quantum efficiency of 40% or more.
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M. Ettenberg (1975) studied this question.
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