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June 28, 1973Electronics Letters

Low threshold-current density in 5-layer-heterostructure (GaAl)As/GaAs localised-gain-region injection lasers

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Authors

GTG.H.B. ThompsonThe University of Texas at AustinPKP.A. KirkbyNortel (Canada)

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Thompson et al. (1973) studied this question.

synapsesocial.com/papers/6a6f2cbfa528af2d65c2dcd4https://doi.org/10.1049/el:19730214
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1(GaAl)As lasers with a heterostructure for optical confinement and additional heterojunctions for extreme carrier confinement1973 · 59 citations
  2. 2DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm21970 · 152 citations
  3. 3The properties of double heterostructure lasers with very narrow active regions1972 · 14 citations
  4. 4High peak power from (GaAl)As–GaAs double-heterostructure injection lasers1973 · 22 citations