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Self-consistent pseudopotential calculations of the electronic structure of the (110) Ge-ZnSe interface (IF) indicate a density of localized IF states that may be experimentally detectable. The full spectrum is presented and the character of the IF states is discussed. Evaluations of the bond charges indicate little charge transfer parallel to the IF. A proposed relaxation of atoms at the IF is also presented. The detailed electronic structure of Ge-ZnSe is found not to be a simple extension of that of Fe-GaAs.
Pickett et al. (Sat,) studied this question.