Kopin Corporation (United States)

Recent papers from Kopin Corporation (United States)

1. Device Delay in GaN Transistors Under High Drain Bias ConditionsIEEE Electron Device Letters · 2013
2. Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctionsJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2013
3. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistorsJournal of International Crisis and Risk Communication Research · 2013
4. 317 GHz InAlGaN/GaN HEMTs with extremely low on‐resistancePhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2013
5. Quaternary Barrier InAlGaN HEMTs With fT/fₘₐₓ of 230/300 GHzIEEE Electron Device Letters · 2013
6. InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier andfT/fmaxof 260/220 GHzApplied Physics Express · 2013
7. Deep centers and persistent photocapacitance in AlGaN/GaN high electron mobility transistor structures grown on Si substratesJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2012
8. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliabilityJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2012
9. Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctionsJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2012
10. 193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistorsJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2012
11. Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistorsJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2012
12. Impact of Al₂O₃ Passivation Thickness in Highly Scaled GaN HEMTsIEEE Electron Device Letters · 2012
13. Controlled Synthesis of AlN/GaN Multiple Quantum Well Nanowire Structures and Their Optical PropertiesNano Letters · 2012
14. Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiationJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2012
15. InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor depositionApplied Physics Letters · 2012
16. Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic ContactsIEEE Electron Device Letters · 2012
17. Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistorsJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011
18. Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistorsJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011
19. Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistorsJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011
20. Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility TransistorsApplied Physics Express · 2011