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Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors, Wang, Ronghua, Li, Guowang, Verma, Jai, Zimmermann, Tom, Hu, Zongyang, Laboutin, Oleg, Cao, Yu, Johnson, Wayne, Gao, Xiang, Guo, Shiping, Snider, Gregory, Fay, Patrick, Jena, Debdeep, Huili, Huili, Xing, Xing
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Wang et al. (2011) studied this question.
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