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Fundamental study demonstrates high-precision plasma processing in semiconductor substrates, indicating improved manufacturing efficiency.
We propose numerically controlled plasma processing by temporally and spatially controlling the excitation light irradiation area for the high-throughput and high-precision finishing of semiconductor substrates. The key is to introduce pulse modulation into the high-frequency power supply for plasma generation and to control the on- and off-times in each cycle. The off-time must be sufficiently long to eliminate charged particles in the plasma, whereas the on-time must be short enough to suppress plasma propagation. In this fundamental study, a one-dimensional wire-electrode etching system was used to investigate on- and off-times, demonstrating processing only in areas irradiated with excitation light.
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Nabata et al. (2026) studied this question.
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