InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

High electron mobility transistor (HEMT) structures of AlInGaN/AlN/InGaN/GaN were grown by metal-organic chemical vapor deposition. A combination of low growth rate and high growth temperature during synthesis of the InGaN channel layer led to significant improvement in HEMT electron transport properties. The improvement was correlated with an evolution of both surface roughness and photoluminescence intensity of InGaN. Record electron mobilities from 1070 to 1290 cm2/V·s with associated sheet charge density of ∼2 × 1013 cm−2 were obtained across the InxGa1-xN channel composition range x = 0.05 to 0.10.