Kyma Technologies (United States)

Recent papers from Kyma Technologies (United States)

1. Cr2O3/β-Ga2O3 heterojunction diodes on thick, mid-1015 cm−3 low-doped drift layer with 3.45 kV breakdown voltageJournal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2026
2. Insights from the 8th Sustainable Phosphorus Summit (SPS8)Research Ideas and Outcomes · 2026
3. NiO/Ga2O3 heterojunction rectifiers with >8.1 kV breakdown enabled by optimized field plate configurationJournal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2026
4. Thick, low doped (001) gallium oxide drift layers at 100 mm via halide vapor phase epitaxyJournal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2026
5. Characterization of p-type NiOx deposited by low power sputteringJournal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2026
6. Investigating the contributions of electrostatic and capillary effects in anti-dust nanostructuresNanotechnology · 2026
7. Intrinsic emittance properties of an Fe-doped β-Ga2O3(010) photocathode: Ultracold electron emission at 300 K and the polaron self-energyJournal of Applied Physics · 2026
8. Resting energy expenditure of women with and without polycystic ovary syndrome: a systematic review and meta-analysis*2025
9. Adaptive Machine Learning Framework enables Unprecedented Yield and Purity of Adeno-Associated Viral Vectors for Gene Therapy2025
10. Wicked Problems: Graduate Students’ Experiences in A Convergent Research EnvironmentResearch in Science Education · 2025
11. Iron dopant energy levels in β-Ga2O3Applied Physics Letters · 2024
12. Toward high-throughput deposition of III-V materials and devices using halide vapor phase epitaxy2024
13. Low‐Pressure, Modified Halide Vapor‐Phase Epitaxy for Chemically Pure GaN Epilayersphysica status solidi (b) · 2024
14. Impact of fin aspect ratio on enhancement of external quantum efficiency in single AlGaN fin light-emitting diodes pixelsApplied Physics Letters · 2023
15. Ultra-Wide Band Gap Ga₂O₃-on-SiC MOSFETsACS Applied Materials & Interfaces · 2023
16. Growth-microstructure-thermal property relations in AlN thin filmsJournal of Applied Physics · 2022
17. Indium Tin Oxide (ITO) based Ohmic Contacts on Bulk n-GaN SubstrateECS Journal of Solid State Science and Technology · 2022
18. Study of interface trap density of AlOxNy/GaN MOS structuresApplied Physics Letters · 2021
19. Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulationsJournal of Applied Physics · 2021
20. Ga 2 O 3 -on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap ElectronicsACS Applied Materials & Interfaces · 2021