Randomized trial demonstrates the effectiveness of halide vapor phase epitaxy for thick gallium oxide layers, suggesting potential for cost-efficient power electronics.
Key Points
The aim is to produce thick, low doped epitaxial layers of gallium oxide for power electronics.
Used halide vapor phase epitaxy to grow layers thicker than 50 μm on 2 in. and 100 mm Ga2O3 (001) wafers.
Achieved intentional n-type doping of less than 1 × 10^16 cm−3.
Reduced film roughness to less than 25 nm by introducing H2 during growth.
Successfully produced thick layers over 50 μm with low doping levels.
Achieved reduced roughness (<25 nm) across the wafer area, enhancing material quality.
Supports gallium oxide as a strong candidate for next-generation high voltage power electronics.