NEC (United Kingdom)

Recent papers from NEC (United Kingdom)

1. Fixed length low discrepancy sequencesMonte Carlo Methods and Applications · 2026
2. Multichannel hybrid quantum cryptography for submarine opticalcommunicationsApplied Optics · 2026
3. Rekindling network protocol innovation with user-level stacksACM SIGCOMM Computer Communication Review · 2014
4. Effect of Temperature and Strain Rate on Low-Cycle Fatigue Life of Bi-Sn Eutectic AlloyJournal of The Japan Institute of Electronics Packaging · 2013
5. Evaluation of a 2.5 mm×2.5 mm Sized Two-dimensional Vector Magnetic Sensor and Measurement of Magnetic Property Distribution of a Magnetic Circuit Model Core with Grain-oriented Electric Steel SheetsIEEJ Transactions on Fundamentals and Materials · 2012
6. Substrate Current due to Impact Ionization in MOS-FETJapanese Journal of Applied Physics · 1976
7. Optical Damage in LiTaO₃Japanese Journal of Applied Physics · 1973
8. Properties of Vapor Deposited Silicon Nitride Films with Varying Excess Si ContentJapanese Journal of Applied Physics · 1973
9. Influence of Device Parameters on Memory Performance of MNOS StructureJapanese Journal of Applied Physics · 1972
10. Electronic Processes in Metal-Silicon Nitride-Silicon Dioxide-Silicon SystemsJapanese Journal of Applied Physics · 1972
11. Broadening of Landau Levels in Two-Dimensional Electron Gas. II. Transverse MagnetoconductanceJournal of the Physical Society of Japan · 1971
12. Determination of the Distribution Coefficients of Li2O into LiNbO3 by Phase Matching TemperaturesJapanese Journal of Applied Physics · 1971
13. Broadening of Landau Levels in Two-Dimensional Electron Gas: Its Effect on Surface CapacitanceJapanese Journal of Applied Physics · 1971
14. Cause of the High Pesistance Region at Vapour Epitaxial GaAs Layer-Substrate InterfaceJapanese Journal of Applied Physics · 1971
15. Extension of Zone Plate and Its ApplicationTransactions of the Society of Instrument and Control Engineers · 1970
16. One-Dimensional Antiferromagnetic Properties of KCuF3Progress of Theoretical Physics Supplement · 1970
17. C-V Characteristics of MOS Diodes Prepared by SiH₄-NO₂SystemJapanese Journal of Applied Physics · 1969
18. Impurity Transfer in GaAs Vapor Growth and Carrier-Concentration Profiles of the Grown FilmsJapanese Journal of Applied Physics · 1968
19. Diffusion of Zinc into GaAsJapanese Journal of Applied Physics · 1968
20. Plastic Deformation of Point Contact Germanium DiodeJapanese Journal of Applied Physics · 1967