This research demonstrates ferroelectric control of magnetism in a multiferroic heterostructure, suggesting potential for innovative spin field effect transistors.
The ferroelectric(FE) control of magnetism is of great importance for designing non-volatile, low-power consumption memories. In this paper, a two-dimensional(2D) multiferroic van der Waals(vdW) heterostructure(HS) with a bilayer of type A antiferromagnet(AFM) FeCl₂ clamped by the bilayer FE In₂Se₃ was proposed to investigate the electronic structure by using first-principles calculations. FE polarization directions of the top and bottom In₂Se₃ layers were switched to obtain four polarization configurations of the heterostructure, enabling control of the bilayer FeCl₂(bi-FeCl₂) interlayer coupling from antiferromagnetic to ferromagnetic(FM) and regulation of the magnitude and direction of the total magnetic moment. Notably, FE polarization causes the spin-polarized band splitting of the bi-FeCl2, creating polarized current channels with opposite spins in the different layers of FeCl₂. This effect is attributed to interfacial charge redistribution at the In₂Se₃/FeCl₂ interface. Leveraging this, we innovatively designed a four-state spin field effect transistor(FET) and a logical storage scheme with non-volatile and electric field manipulation capability, providing a new approach for spintronics research.
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Ao et al. (2025) studied this question.
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