August 6, 2025Journal of Applied PhysicsOpen Access

Tunable electronic properties, band alignments, and charge transfer of ferroelectric MoSi2N4/In2Se3 van der Waals heterostructures

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JNJin Quan NgSingapore University of Technology and Design YAYee Sin AngSingapore University of Technology and Design QWQingyun WuSingapore University of Technology and Design

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Implication

First-principles calculations reveal bandgap modulation and charge transfer in MoSi2N4/In2Se3 heterostructures, suggesting potential for ferroelectric devices.

Key Points

MoSi2N4/In2Se3 van der Waals heterostructures exhibit tunable electronic properties under varying strain conditions.
Different bandgap types and transitions are observed in both ferroelectric polarizations.
The study finds a potential topological phase transition under specific biaxial strain conditions.
These findings offer new insights for developing low-power ferroelectric solar cells and transistors.

Cite This Study

Ng et al. (2025) studied this question.

synapsesocial.com/papers/689522069f4f1c896c4293e7 https://doi.org/10.1063/5.0282380

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Implication

First-principles calculations reveal bandgap modulation and charge transfer in MoSi2N4/In2Se3 heterostructures, suggesting potential for ferroelectric devices.

Tunable electronic properties, band alignments, and charge transfer of ferroelectric MoSi2N4/In2Se3 van der Waals heterostructures

Discussion

Member takes

Implication

Key Points

Cite This Study

Tunable electronic properties, band alignments, and charge transfer of ferroelectric MoSi2N4/In2Se3 van der Waals heterostructures

Discussion

Member takes

Implication

Key Points

Cite This Study

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