Spin Polarization Crossing a Heterostructure of a Ferromagnetic/Semiconductor-Based Rashba Spin–Orbit Interaction: Tight Binding Approach

The spin polarization of current in a conventional ferromagnetic and semiconductor-based Rashba spin–orbit interaction (RSOI) in an infinite two-dimensional system and the electrical properties of the junction are described using the square lattice model. In particular, a suitable approach is devised to compute the particle transport characteristics in the junction, taking into consideration the interface quality. It is found that the spin polarization becomes strongly reliant on the spin-flip scattering potential at applied voltages close to the crossings of the semiconductor-based RSOI band. On the other hand, in the voltage near the middle band, the spin polarization of current is found to remain modest and not influenced by either the spin-flip or non-spin-flip scattering potentials.