Stabilizing Organic Semiconductor Films and Transistors by Quasi‐Dispersion Strengthening Strategy

The intrinsic morphological instability in organic semiconductor (OSC) films remains a bottleneck for OSC application because of the weak intermolecular interaction. This instability occurs even at room temperature and accelerates at high temperatures, leading to the degradation of OSC films and devices. Here, it is revealed that grain boundaries and step‐edges are key factors for morphological evolution of OSC films and then developed a general quasi‐dispersion strengthening strategy to break through the bottleneck by introducing a trace of nanoparticles with proper density and size to the grain boundaries and step‐edges of OSC films, which significantly increases the activation energy of morphological evolution. The quasi‐dispersion strengthening strategy enables the stabilization of ultra‐thin OSC films. The strengthened dinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene (DNTT) films and corresponding transistors demonstrate experimental storage stability over 4 years and a theoretical lifetime of 381 years with a 5% performance degradation at room temperature. Notably, the strengthened DNTT transistors work normally for over 16 days even at high temperature of 150 °C. Moreover, the general applicability of this strategy is demonstrated across 15 OSCs, including p/n‐type small molecules and polymers. The study will promote and expand the practical applications of various organic electronic and optoelectronic devices.