In-situ regenerative adduct assisted p-type doping of organic semiconductor

Organic semiconductors (OSCs) are leading materials for next-generation optoelectronic devices. Effective charge transport in devices often requires electronic doping of OSCs. Conventional methods using molecular dopants or metal salts often suffer from poor efficiency, undesirable side products, and require additives and prolonged incubation. We present in situ regenerative adduct-assisted (IRRA) doping, which is a rapid, metal-ion-free, and additive-free approach that enables clean and efficient doping of various OSCs. Spectroscopic analyses reveal a self-regenerating adduct as the active doping species. The simplicity of the doping method and the range of materials available open new avenues for the development of diverse p-doping strategies, providing a scalable and highly adaptable approach to doping hole-transporting layers for various types of optoelectronic devices, including halide perovskite solar cells.