Experimental analysis reveals improved selectivity for mustard in metal oxide semiconductor sensors, indicating potential for chemical warfare agent detection.
The poor selectivity of metal oxide semiconductor sensors is a major constraint to their application in the detection of chemical warfare agents. We prepared a (Pt+Pd+Rh)@Al2O3/(Pt+Rh)-WO3 sensor by using (Pt+Pd+Rh)@Al2O3 as a catalytic film material and (Pt+Rh)-WO3 as a gas-sensitive film material. Using temperature dynamic modulation, the (Pt+Pd+Rh)@Al2O3/(Pt+Rh)-WO3 sensor was realised to improve the selectivity for mustard. Due to the catalytic effect of the (Pt+Pd+Rh)@Al2O3 catalytic film on mustard, mustard was able to be catalytically generated into mustard sulphoxide after passing through the (Pt+Pd+Rh)@Al2O3 catalytic film. Under a certain temperature dynamic modulation, the mustard concentration on the surface of the (Pt+Rh)-WO3 gas-sensitive film showed an increase and then a decrease. Since the resistance response of the (Pt+Rh)-WO3 gas-sensitive film to mustard was much higher than that of mustard sulphoxide, the change in the resistance of the (Pt+Rh)-WO3 gas-sensitive film was mainly determined by the change in the concentration of mustard, which led to the peak signal in the curve of its resistance response to mustard. The experimental results showed that the (Pt+Pd+Rh)@Al2O3/(Pt+Rh)-WO3 sensor had peak signals in the resistance response to mustard only, and not in the resistance response to 12 interfering gases, such as carbon monoxide.
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Qi et al. (2025) studied this question.
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