This study demonstrates crystallization of germanium monosulfide in sub-100 nm films, indicating plasma power improves sulfur incorporation and film thickness.
Germanium Monosulfide (GeS) is a semiconducting 2D material that shows significant promise for use in logic devices due to its high carrier mobility and direct band gap. However, thickness-controlled and industry compatible synthesis of crystalline GeS is yet to be realized. In this study, by utilizing RF plasma cracking for sulfur during film synthesis, the in-plane on-insulator crystallization of GeS from sub-100 nm amorphous germanium-sulfur films can be realized via atmospheric pressure annealing at 400 °C. The effect of plasma power on molecular-beam deposited films is more finely investigated, revealing a positive trend between plasma power and film sulfur incorporation and thickness and increases in crystallization-inhibiting film sp3 behavior are noticed at plasma powers beyond 61W.
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Mahmoud et al. (2025) studied this question.
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