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This is a Experimental Study study.

October 20, 2025Open Access

Femtosecond Laser Crystallization of Ultrathin a-Ge Films in Multilayer Stacks with Silicon Layers

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Ultrashort pulsed laser treatment improves crystallization in ultrathin films with silicon layers, indicating new material properties.

Selective crystallization of ultrathin amorphous germanium films is achieved with femtosecond laser pulses, showing lower temperature processing.
Raman spectroscopy reveals that explosive stress-induced crystallization is suppressed in ultrathin films, favoring thermal melting instead.
The unique islet structure of ultrathin germanium films allows for nanopore formation, which reduces stress during laser heating.
This process demonstrates potential for creating highly photostable nanodots, useful for future semiconductor applications.

Cheng et al. (2025) studied this question.

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