Research demonstrates enhanced flexible photodetectors using Ga2O3 on PET substrates, indicating promising optoelectronic applications.
Gallium oxide (Ga₂O₃) stands out as an exceptional ultra-wide bandgap semiconductor material, making it highly suitable for solar-blind ultraviolet (SUV) photodetectors. Flexible photodetectors, valued for their robustness, adaptability, and lightweight nature, mark a notable breakthrough in optoelectronics. In this study, the radio-frequency magnetron (RF) sputtering was used to deposit the Ga₂O₃ thin films on PET substrates with the different sputtering powers. The performance of the flexible Ga₂O₃ SUV photodetector was also evaluated.
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Zhang et al. (2025) studied this question.
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