High-Detectivity Organic Photodetector with InP Quantum Dots in PTB7-Th:PC71BM Ternary Bulk Heterojunction

Organic photodetectors (OPDs) offer considerable promise for low-power, solution-processable biosensing and imaging applications; however, their performance remains limited by spectral mismatch and interfacial trap states. In this study, a highly sensitive polymer photodiode was developed via trace incorporation (0.8 wt%) of InP/ZnSe/ZnS quantum dots (QDs) into a PTB7-Th:PC71BM bulk heterojunction (BHJ) matrix. This QD doping approach enhanced the external quantum efficiency (EQE) across the 540–660 nm range and suppressed the dark current density at −2 V by passivating interface trap states. Despite a slight decrease in optical absorption at the optimized composition, the internal quantum efficiency (IQE) increased significantly from ~80% to nearly 95% resulting in a net EQE improvement. This suggests that QD incorporation improved charge transport without compromising charge separation efficiency. As a result, the device achieved a specific detectivity (D*) of 1.8 × 1013 Jones, representing a 93% improvement over binary BHJs, along with an ultra-low dark current density of 7.76 × 10−10 A/cm2. Excessive QD loading, however, led to optical losses and increased dark current, underscoring the need for precise compositional control. Furthermore, the enhanced detectivity led to a 4 dB improvement in the signal-to-noise ratio (SNR) of photoplethysmography (PPG) signals in the target wavelength range, enabling more reliable biophotonic sensing without increased power consumption. This work demonstrates that QD-based spectral and interfacial engineering offers an effective and scalable route for advancing the performance of OPDs, with broad applicability to low-power biosensors and high-resolution polymer–QD imaging systems.