High Performance Self Powered Infrared Photodetectors Based on PbSe Quantum Dots With Enhanced Charge Transport Through Hybrid Bulk Heterojunction Engineering
Randomized trial demonstrates enhanced charge transport in infrared photodetectors, suggesting improved efficiency.
Key Points
This work aims to improve charge transport and reduce recombination in high-performance photodetectors using PbSe quantum dots.
Fabricated self-powered near-infrared photodetectors using PbSe quantum dots integrated into hybrid bulk-heterojunction architectures with P3HT and PVK.
Synthesize colloidal PbSe QDs via a controlled solution process for enhanced crystallinity and NIR absorption.
Conduct DFT calculations and TCAD simulations to analyze electronic properties and device performance.
PbSe:PVK photodetector achieved a maximum responsivity of 17.89 A/W and an ON/OFF ratio of 7.86 × 10^2.
Detectivity of 2.28 × 10^14 Jones under 980 nm illumination in self-powered mode was recorded.
An extended linear dynamic range of 63.45 dB was observed in the optimized device.