Optimizing the ITO/MZO/C₂N/CZT heterojunction: a pathway to high-performance photovoltaics

This study highlights a purpose-driven design and optimization of a C 2 N-based solar cell structure using the SCAPS-1D solar cell simulator. We investigate the performance characteristics of an ITO/MZO/C 2 N/CZT heterojunction stack, focusing on optimizing the Magnesium Zinc Oxide (MZO) Electron Transport Layer (ETL), the C 2 N absorber, and the CZT Hole Transport Layer/Back Surface Field (HTL/BSF). By systematically varying critical parameters such as ETL thickness, absorber thickness, and doping densities, along with interface characteristics and operating temperature, we engineer a device that achieves a peak simulated power conversion efficiency (PCE) of 32.20%. The optimized configuration yields impressive performance metrics, including V oc = 1.605 V, J sc = 22.927 mA/cm², and FF = 87.48%. These results highlight the significant impact of meticulous layer engineering, especially with regard to the ETL and BSF, on achieving ultra-high efficiencies in C 2 N photovoltaics.