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This is a In Vitro Study study.

Ferroelectric modulated giant valley polarization and half metallicity in 2D RuBrF/Sc2CO2 multiferroic heterostructure for non-volatile memory applications

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First-principles simulations demonstrate half-metal transformation in 2D valleytronics, indicating potential for non-volatile memory.

The system transitions from a semiconductor to a half-metal with a spontaneous valley polarization of 329 meV when the polarization state changes.
In the -P state, it exhibits ferromagnetic semiconductor properties, while the +P state demonstrates ferromagnetic half-metal characteristics.
Using first-principles simulations, magnetic anisotropy changes from in-plane to out-of-plane as polarization varies.
Results suggest a promising method for controlling valleytronic properties at the nanoscale, enhancing device design potential.

Jin et al. (2025) studied this question.

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