Analysis reveals enhanced solar cell performance with optimized doping and layer thickness, suggesting important design considerations.
The article investigates the effect of doping and layer thickness on the efficiency of solar cells based on the ZnO/porous-Si/Si heterojunction using PC1D simulation. The results show that optimizing the ZnO and porous-Si layers' thickness significantly affects the solar cell's performance. The maximum current value was achieved at a ZnO thickness of 10 μm and porous-Si of 1 μm. In comparison, with an increase in the thickness to 15 μm, the material approaches the bulk, which reduces the efficiency due to increased carrier recombination. A significant effect of the doping concentration of the ZnO film was found. When the doping concentration increased to 1019 cm⁻³, the highest efficiency was achieved – 22.6%. However, excessive doping causes increased carrier recombination, which leads to a decrease in cell performance.
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Nosan et al. (2025) studied this question.