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August 17, 20250 citations

The Influence of Al Doping on the Raman Characteristics and some physical properties of ZnO thin films deposited by dip-coating process

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NSNassima SeghairiLarbi Ben M'hidi University of Oum El BouaghiBSBenkara SalimaLarbi Ben M'hidi University of Oum El BouaghiSBSeddik Bouabida

Key Points

  • Al doping significantly alters the properties of ZnO thin films, leading to variations in crystallization characteristics based on concentration.
  • Key findings reveal that as aluminum doping increases, the direct band gap of ZnO thin films decreases progressively with higher concentrations of Al.
  • Assessment using X-ray diffraction and scanning electron microscopy confirmed changes in phase composition and morphology of the films due to Al doping.
  • This research indicates that Al doping may enhance or alter the physical characteristics of ZnO films, with potential implications for their applications.

Abstract

Abstract In this study, we systematically analyze how Aluminum doping affects the physicochemical properties of ZnO. Zn1 − xO:Alx was used to express the aluminum doping levels in the solution, where x might be 0; 0.5; 1; 2, and 4 weight percent Al. Key parameters, including phase composition, particle size, and purity, were examined through X-ray diffraction (XRD). Furthermore, the morphological features such as the shape and surface structure of the samples were evaluated using scanning electron microscopy (SEM). The chemical composition of the deposited films was analyzed using energy dispersive X-ray spectroscopy (EDS). Optical investigations demonstrated that the direct band gap gradually decreased with higher Al doping concentrations. Raman spectroscopy was employed to examine the crystallization properties of the films.

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Cite This Study

Seghairi et al. (2025) studied this question.

synapsesocial.com/papers/68a36de60a429f797333156ehttps://doi.org/10.21203/rs.3.rs-7333245/v1
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