The Influence of Al Doping on the Raman Characteristics and some physical properties of ZnO thin films deposited by dip-coating process

Abstract In this study, we systematically analyze how Aluminum doping affects the physicochemical properties of ZnO. Zn1 − xO:Alx was used to express the aluminum doping levels in the solution, where x might be 0; 0.5; 1; 2, and 4 weight percent Al. Key parameters, including phase composition, particle size, and purity, were examined through X-ray diffraction (XRD). Furthermore, the morphological features such as the shape and surface structure of the samples were evaluated using scanning electron microscopy (SEM). The chemical composition of the deposited films was analyzed using energy dispersive X-ray spectroscopy (EDS). Optical investigations demonstrated that the direct band gap gradually decreased with higher Al doping concentrations. Raman spectroscopy was employed to examine the crystallization properties of the films.