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This is a In Vitro Study study.

Integration of InGaAs/InP Single Photon Avalanche Diode and Thin Film Lithium Niobate Photonic Chip via Photonic Wire Bonding

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The integrated single-photon avalanche diode achieves a photon detection efficiency of 13.8% at −30 °C, improving quantum photonics.
Photonic wire bonding technology links the SPAD to TFLN chips, optimizing optical coupling over a span of 300 µm.
Experiments reveal a dark count rate of 6 × 10 −4 Hz/gate and after-pulse probability of 3%, indicating robust performance.
This hybrid integration method highlights the potential for compact, low-cost systems in quantum communication and sensing.

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Photonic wire bonding integrates InGaAs/InP SPADs with thin film lithium niobate chips, enhancing photon detection efficiency.

Ren et al. (2025) studied this question.

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