Rare-earth Sm₂O₃-doped SnO₂: tailoring optoelectrical behaviors for a self-driven heterojunction UV-NIR photodetector

Jamal M. Rzaij; Noor F. Khdr Al Attwani; Ethar Yahya Salih; Mustafa K. A. Mohammed

doi:10.1039/d5ma00719d

January 1, 2025Materials AdvancesOpen Access

Rare-earth Sm₂O₃-doped SnO₂: tailoring optoelectrical behaviors for a self-driven heterojunction UV-NIR photodetector

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Key Points

The engineered Sm2O3-doped SnO2/Si heterojunction enables a self-powered photodetector with quick response times.
Tailored optoelectronic properties were achieved, significantly improving UV-NIR detection performance.
Fabrication of the device combines materials with unique properties, resulting in enhanced functionality.
This research may open pathways for efficient photodetectors in various applications, emphasizing self-powering capabilities.

Implication

Novel Sm2O3-doped SnO2/Si heterojunction enhances optoelectronic traits for a fast-response UV-NIR photodetector, implying effectiveness in energy efficiency.

Abstract

This work elucidates the fabrication of a novel rare-earth Sm 2 O 3 -doped SnO 2 /Si heterojunction, engineered with tailored optoelectronic properties to enable a self-powered, fast-response UV-NIR photodetector.

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Cite This Study

Rzaij et al. (2025) studied this question.

synapsesocial.com/papers/68af494dad7bf08b1ead4b83 https://doi.org/10.1039/d5ma00719d

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Rare-earth Sm₂O₃-doped SnO₂: tailoring optoelectrical behaviors for a self-driven heterojunction UV-NIR photodetector

Key Points

Implication

Abstract

Discussion

Cite This Study

Rare-earth Sm₂O₃-doped SnO₂: tailoring optoelectrical behaviors for a self-driven heterojunction UV-NIR photodetector

Key Points

Implication

Abstract

Discussion

Cite This Study

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