Fabrication of optoelectronic artificial synapses shows enhanced synaptic behaviors and memory transition in neuromorphic computing.
Recently, heterojunction-based optoelectronic artificial synaptic devices present a promising avenue for the advancement of neuromorphic computing. However, the sophisticated fabrication procedures have impeded their future applications. In this work, a low-cost solution process is employed to fabricate the PEDOT:PSS/IZO heterojunction-based optoelectronic artificial synapses. The device demonstrates the ability to simulate a variety of optoelectronic synaptic behaviors and successfully implement the transition between short/long-term memory states under diverse light pulse stimulation. Additionally, in comparison to single-layer IZO based optoelectronic artificial synapses, the PEDOT:PSS/IZO heterojunction-based device exhibits superior optoelectronic synaptic characteristics. This enhancement is primarily attributed to the PEDOT:PSS/IZO heterojunction, which effectively promotes the separation and transport of photogenerated carriers. The findings of this study highlight the significant potential of the fabricated optoelectronic artificial synapses for application in the area of neuromorphic computing.
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Yin et al. (2025) studied this question.
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