Research demonstrates enhanced properties of rare-earth nitrides in cryogenic electronics, highlighting potential applications.
Driven by the pursuit of high-performance electronic devices, research into novel materials with properties appropriate for cryogenic applications has unveiled the exceptional properties of the rare-earth nitride series of intrinsic ferromagnetic semiconductors. Here we report on the field, focusing on advances in thin film growth, the understanding of the magnetism and electronic structure, and developments which enable applications in cryogenic electronic devices.
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Holmes-Hewett et al. (2025) studied this question.
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