Research demonstrates developments in rare-earth nitrides for cryogenic electronic devices, indicating potential for enhanced performance.
Driven by the pursuit of high-performance electronic devices, research into novel materials with properties appropriate for cryogenic applications has unveiled the exceptional properties of the rare-earth nitride series of intrinsic ferromagnetic semiconductors. Here we report on the field focusing on developments, since the most recent comprehensive review [1], which enable applications in cryogenic electronic devices.
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Holmes-Hewett et al. (2025) studied this question.
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