Investigates photoluminescence and carrier dynamics in GaSb/GaAs quantum rings, suggesting new optimization methods.
Type‐II quantum rings (QRs) exhibit unique physics with great potential for future technologies. In this work, the magneto‐optical properties and carrier dynamics of single‐ and ten‐layer stacked GaSb/GaAs QR ensembles fabricated by molecular beam epitaxy are investigated. Activation energies extracted in both single‐ and ten‐layer structures with temperature‐dependent photoluminescence (PL), establish recombination dynamics closely linked to the growth method of the nanostructures. Clear optical absorption characteristics are also determined with PL‐excitation experiments. In addition, transient temperature‐dependent PL reveals distinct recombination pathways through nontrivial carrier decay behavior. With increasing excitation power density, a strong blue shift in peak position energies is observed due to evolving carrier kinetics across low and high excitation regimes. Finally, optical Aharonov–Bohm oscillations are demonstrated for the first time in type‐II QRs. The data presented here are expected to advance the optimization of growth and physical properties of GaSb/GaAs QRs.
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Gandan et al. (2025) studied this question.
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