Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
May 1, 2021APL MaterialsOpen Access

Highly uniform GaSb quantum dots with indirect–direct bandgap crossover at telecom range

View Full Paper
Ask AI
Bookmark
Share

Discussion

Loading...

Member takes

Overview

Experimental study demonstrates indirect–direct bandgap crossover in GaSb quantum dots, indicating strong potential for infrared quantum optics.

Key Points

  • To synthesize and optically characterize uniform GaSb quantum dots embedded in an AlGaSb matrix for telecom-band quantum photonic applications.
  • Fabricated GaSb quantum dots by filling droplet-etched nanoholes within a single-crystalline AlGaSb matrix to achieve low dot densities.
  • Characterized optical properties, band alignments, and emission linewidths using photoluminescence experiments.
  • Photoluminescence spectra demonstrated an indirect–direct bandgap crossover at telecom wavelengths driven by Γ and L conduction band valley alignment under quantum confinement.
  • In the direct bandgap regime near 1.5 µm, quantum dots exhibited type I band alignment, narrow excitonic spectral lines, and minimal inhomogeneous broadening.

Cite This Study

A 2021 study studied this question.

synapsesocial.com/papers/6a8858376304c7fd8e4e00bbhttps://doi.org/10.1063/5.0049788
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Quantum dots as potential sources of strongly entangled photons: Perspectives and challenges for applications in quantum networks2021 · 103 citations
  2. 2Evolution of Holed Nanostructures on GaAs (001)2009 · 28 citations
  3. 3Strain relief by periodic misfit arrays for low defect density GaSb on GaAs2006 · 261 citations
  4. 4On-demand generation of background-free single photons from a solid-state source2018 · 298 citations
  5. 5Optical functions from 0.02 to 6 eV of AlxGa1−xSb/GaSb epitaxial layers1998 · 69 citations