Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes

This research focuses on strain-free GaSb/AlGaSb quantum dots (QDs) grown via local droplet etching (LDE) for their potential in quantum photonic applications. These QDs exhibit excitonic emission in the telecom S-band with a narrow ensemble emission linewidth. Through theoretical modeling in addition to previous photoluminescence experiments, the study investigates the electronic band structure, dipole transitions, and dimensions of the GaSb/AlGaSb QDs. Key findings include insights into the indirect-direct bandgap crossover based on QD dimensions and the comparison of dipole transitions with photoluminescence measurements. The results contribute to the practical integration of these QDs in quantum photonic devices and fiber optics-based quantum key distribution networks.