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August 22, 2025Journal of Applied PhysicsOpen Access

Terahertz excitation spectroscopy of Bi/GaAs heterostructures

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Authors

VPV. PačebutasRNRičardas NorkusГТГ. Тамулайтис

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Overview

Heterojunctions with bismuth layers enhance THz signal generation in semiconductors, suggesting new applications.

Key Points

  • The study demonstrates that bismuth layers significantly enhance THz signal generation in semiconductors.
  • Strongest THz signals occurred at the Bi and p-GaAs interface with holes moving above 20 million cm/s.
  • Analysis involves terahertz pulse generation stimulated by femtosecond optical pulses of varied wavelengths.
  • Findings point to potential advancements in efficient THz pulse emitters for p-type semiconductors.

Cite This Study

Pačebutas et al. (2025) studied this question.

synapsesocial.com/papers/68af5701ad7bf08b1eadd651https://doi.org/10.1063/5.0277692
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