Research demonstrates improved bendability and stretchability in thin-film transistors, enhancing micro-LED display performance.
We present ferroelectric thin‐film transistors (FE‐TFTs) with a metal‐insulator‐semiconductor‐ferroelectric (MISF) structure on polyimide (PI) andpolydimethylsiloxane (PDMS) substrate The memory window is 9.1 V and can operate under a 1 mm bending radius. Its biaxial stretchability is 30%. We proposed a 3 TOCpixel circuit without a capacitor for the PWM mode of micro‐LED displays using FE‐TFTs.
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Lee et al. (2025) studied this question.
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