Photoluminescence analysis shows a 173% boost in n-GaN intensity, indicating isotropic dry etching could reduce nonradiative recombination.
We show significant improvement on photoluminescence intensity of the n‐type Gallium Nitride surface by using a damagerecovery isotopic dry etching technique to remove the plasma damaged layer. The average photoluminescence intensity exhibits an approximate 173% increase after 60 mins‐etching, compared with the n‐GaN without isotropic etching. Our findings pave the way for a significant step towards commercialization of μLED displays for AR/VR, phones and smart watches.
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Wei et al. (2025) studied this question.
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