The Influence of Two-Region Morphology and Grain Shape on the Transport Critical Current Density in the Range from 15 K to 30 K in SiC-Doped MgB2 Wires Fabricated by the Powder-in-Tube Method

The paper presents the results of the influence of SiC dopant, annealing temperature, and annealing time on the morphology of MgB2 material in superconducting wires. The results of measurements of critical temperature (Tc), irreversible magnetic field (Birr), resistance in the normal state (Rn), and transport critical current density (Jct) at the temperature range from 15 K to 30 K are presented. The MgB2 material is characterized by the presence of two specific regions. The first region with high density, excess Mg, and rectangular MgB2 grains is located outside the voids surrounding them. The second region occurs inside the ceramic core, away from voids, and its chemical composition corresponds to a stoichiometric Mg to B ratio (1:2), and it is characterized by the presence of spherical grains and lower material density. A higher amount of SiC admixtures (6 at.%) causes an increase in the first region surface area. This kind of structure observation in MgB2 superconducting wires has never been reported previously. The transport measurements showed that higher SiC dopant leads to lower Jct at higher temperatures and high magnetic fields. The studies showed that the point-dominant mechanism and the first region allow for obtaining high Jct at 30 K.