Auger recombination coefficient in heavily Nitrogen-doped 4H-SiC under high-level injection conditions

Abstract 4H-SiC is a pivotal semiconductor for high-power, high-temperature devices, where Auger recombination significantly affects performance under high carrier injection. While previously studied in lightly doped material, data for heavily doped n-type 4H-SiC remains scarce under high injection level. This work investigates the Auger recombination coefficient ( C ) in heavily nitrogen-doped 4H-SiC via time-resolved photoluminescence method across varied carrier concentrations and temperatures. Results show faster decay with increasing excitation and temperature, confirming Auger recombination dominance. The coefficient follows C ∝ T 1.19 , increasing from 3.0 × 10⁻³¹ cm⁶/s at room temperature due to phonon interactions. These insights aid the design of high-efficiency SiC power devices.