Investigating spin-splitter torque reveals reduced current needs for magnetization switching in magnetic memory devices, suggesting future energy efficiency.
This study investigates spin-splitter torque (SST) for magnetization switching in nanoscale magnets with perpendicular anisotropy, aiming to reduce current requirements in magnetic memory devices. Using a micromagnetic model, it shows that optimizing the spin polar angle ( θ p ) can lower the threshold current density by 1.6–27 times compared to traditional spin-orbit torque method. A θ p above ~134° ensures high switching probability, while tailoring the current pulse shape cuts switching error rates by about 200 times. The findings highlight SST’s promise for energy-efficient and reliable switching in future magnetic random-access memory (MRAM) technologies.
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Watanabe et al. (2025) studied this question.
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