Material Removal on Hydrogen-Terminated Diamond Surface via AFM Tip-Based Local Anodic Oxidation

Diamond is a promising next-generation semiconductor material, offering a wider band gap, higher electron mobility, and superior thermal conductivity compared with silicon. However, its exceptional hardness makes it challenging to fabricate. In this study, we demonstrate a novel approach to realize material removal on hydrogen-terminated diamond surfaces by atomic force microscope (AFM) tip-based local anodic oxidation. By adjusting both the applied voltage and hydrogen plasma etching parameters, the material is removed over an area larger than the AFM tip size. Notably, the hardness of the material surrounding the removal zone is significantly reduced, enabling it to be scratched with a silicon tip. These findings open a promising pathway for improving the machinability of diamonds in future device applications.