This research demonstrates improved efficiency in InGaN mini-light-emitting diodes, highlighting advances in quantum wells and addressing the green gap challenge.
We demonstrate ultra-high luminous efficacy InGaN-based green mini-light-emitting diodes (mini-LEDs) grown on c-plane patterned sapphire substrates using metal organic chemical vapor deposition (MOCVD). An Al-treatment technique was developed during multiple quantum wells (MQWs) growth. The Al-treatment InGaN green QWs show a significantly improvement in the radiative recombination efficiency and the Al-treatment 520 nm flip-chip InGaN green mini-LEDs show an ultra-high efficiency after package: a peak external quantum efficiency (EQE) of 65.0% and a peak wall-plug efficiency (WPE) of 60.1%, representing significant progress in addressing the “green gap” challenge.
No takes yet. Share an insight, caveat, or question.
Zhao et al. (2025) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: